发明名称 Glass substrate assembly, semiconductor device and method of heat-treating glass substrate
摘要 Improved method of heat-treating a glass substrate, especially where the substrate is thermally treated (such as formation of films, growth of films, and oxidation) around or above its strain point. If devices generating heat are formed on the substrate, it dissipates the heat well. An aluminum nitride film is formed on at least one surface of the substrate. This aluminum nitride film acts as a heat sink and prevents local concentration of heat produced by the devices such as TFTs formed on the glass substrate surface.
申请公布号 US7038302(B2) 申请公布日期 2006.05.02
申请号 US20040972405 申请日期 2004.10.26
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 FUKADA TAKESHI;SAKAMA MITSUNORI;TERAMOTO SATOSHI
分类号 C23C16/34;H01L23/58;C03B25/00;C03B32/00;C03C17/00;C03C17/22;C03C17/34;G02F1/1333;H01L21/324;H01L29/78;H01L29/786 主分类号 C23C16/34
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