发明名称 |
Non-volatile memory device capable of changing increment of program voltage according to mode of operation |
摘要 |
A non-volatile memory device includes a word line voltage generator circuit for generating a word line voltage to be supplied to a selected row in response to step control signals and a program controller for sequentially activating the step control signals during a program cycle. During the program cycle, the word line voltage generator circuit controls the increment of the word line voltage differently according to the mode of operation, namely, a test mode or a normal mode. Thus test time can be shortened.
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申请公布号 |
US7038949(B2) |
申请公布日期 |
2006.05.02 |
申请号 |
US20040957307 |
申请日期 |
2004.09.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHAE DONG-HYUK;BYEON DAE-SEOK |
分类号 |
G11C16/02;G11C16/06;G11C11/34;G11C16/12;G11C16/34;G11C29/00;G11C29/12 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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