发明名称 |
Process for patterning high-k dielectric material |
摘要 |
A method of patterning a layer of high-k dielectric material is provided, which may be used in the fabrication of a semiconductor device. A first etch is performed on the high-k dielectric layer. A portion of the high-k dielectric layer being etched with the first etch remains after the first etch. A second etch of the high-k dielectric layer is performed to remove the remaining portion of the high-k dielectric layer. The second etch differs from the first etch. Preferably, the first etch is a dry etch process, and the second etch is a wet etch process. This method may further include a process of plasma ashing the remaining portion of the high-k dielectric layer after the first etch and before the second etch.
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申请公布号 |
US7037849(B2) |
申请公布日期 |
2006.05.02 |
申请号 |
US20030608349 |
申请日期 |
2003.06.27 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHIU HSIEN-KUANG;PERNG BAW-CHING;TAO HUN-JAN |
分类号 |
H01L21/302;C23F1/00;H01L21/20;H01L21/28;H01L21/306;H01L21/311;H01L21/3205;H01L21/336;H01L21/4763;H01L29/78 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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