发明名称 |
Method of manufacturing a semiconductor light-emitting element |
摘要 |
There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate and containing a light-emitting layer and a current diffusion layer having a light-extracting surface. The light-emitting element is provided with a light-extracting surface which is constituted by a finely recessed/projected surface, 90% of which is constructed such that the height of the projected portion thereof having a cone-like configuration is 100 nm or more, and the width of the base of the projected portion is within the range of 10-500 nm.
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申请公布号 |
US7037738(B2) |
申请公布日期 |
2006.05.02 |
申请号 |
US20030346108 |
申请日期 |
2003.01.17 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUGIYAMA HITOSHI;OHASHI KENICHI;YAMASHITA ATSUKO;WASHIZUKA SHOICHI;AKAIKE YASUHIKO;YOSHITAKE SHUNJI;ASAKAWA KOJI;EGASHIRA KATSUMI;FUJIMOTO AKIRA |
分类号 |
H01L21/00;H01L21/302;H01L33/06;H01L33/14;H01L33/22;H01L33/32 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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