发明名称 Localized heating and cooling of substrates
摘要 The present invention is directed to an apparatus and process for locally heating and/or cooling of semiconductor wafers in thermal processing chambers. In particular, the apparatus of the present invention includes a device for heating or cooling localized regions of a wafer to control the temperature of such regions during one or more stages of a heat cycle. In one embodiment, gas nozzles eject gas towards the bottom of the wafer to provide localized temperature control. In another embodiment, a transparent gas pipe containing a variety of gas outlets distributes gas onto the top surface of the wafer to provide localized temperature control.
申请公布号 US7037797(B1) 申请公布日期 2006.05.02
申请号 US20000527873 申请日期 2000.03.17
申请人 MATTSON TECHNOLOGY, INC. 发明人 SHOOSHTARIAN SOHAILA;ACHARYA NARASIMHA;ELBERT MIKE;TILLMANN ANDREAS;ZERNICKEL DIETER
分类号 H01L21/31;H01L21/336;H01L21/00;H01L21/26 主分类号 H01L21/31
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