发明名称 |
Method of fabricating a low-defect strained epitaxial germanium film on silicon |
摘要 |
A method of fabricating a germanium film on a silicon substrate includes preparing a silicon substrate; depositing a first germanium film to form a continuous germanium film on the silicon substrate; annealing the silicon substrate and the germanium film thereon in a first annealing process to relax the germanium film; depositing a second germanium film on the first germanium film to form a germanium layer; patterning and etching the germanium layer; depositing a layer of dielectric material on the germanium layer; cyclic annealing the silicon substrate having the germanium layer and dielectric material thereon; and completing a device containing the silicon substrate and germanium layer.
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申请公布号 |
US7037856(B1) |
申请公布日期 |
2006.05.02 |
申请号 |
US20050149883 |
申请日期 |
2005.06.10 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
MAA JER-SHEN;TWEET DOUGLAS J.;LEE JONG-JAN;HSU SHENG TENG |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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