Methods of etching intermediate silicon germanium layers using ion implantation to promote selectivity

摘要

An integrated circuit device structure can be formed by forming an implant mask having a window therein on a structure including upper and lower Si layers and an intermediate SiGe_x layer therebetween. Ions are implanted through the upper Si layer and into a portion of the intermediate SiGe_x layer exposed through the window in the implant mask and blocking implantation of ions into portions of the intermediate SiGe_x layer outside the window. The portions of the intermediate SiGe_x layer outside the window are etched and the portion of the intermediate SiGe_x layer exposed through the window having ions implanted therein is not substantially etched to form a patterned intermediate SiGe_x layer.