发明名称 Technology dependent transformations for Silicon-On-Insulator in digital design synthesis
摘要 The present invention pertains to automated technology dependent transformations for Silicon-On-Insulator (SOI) in the digital design synthesis, the transformations include the steps of receiving input design specification in the form of technology independent specification or interconnected library of standard-cells; performing the technology dependent transformations in the digital design synthesis, resulting in interconnected SOI standard-cells from a SOI target library accounting for floating body effects, including floating body effects affecting delays over long periods of simulation time or testing over long times on fabricated SOI library cells, or SOI transistor level representations, transistor sizing and evaluating the standard-cell mapping and transistor-level representation for all or portion of the input design specification iteratively to meet delay and power constraints for SOI.
申请公布号 US7039882(B2) 申请公布日期 2006.05.02
申请号 US20020172448 申请日期 2002.06.17
申请人 RANA AMAR PAL SINGH;SINGH NIRMAL 发明人 RANA AMAR PAL SINGH;SINGH NIRMAL
分类号 G06F17/50 主分类号 G06F17/50
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