| 发明名称 |
Process for producing an etching mask on a microstructure, in particular a semiconductor structure with trench capacitors, and corresponding use of the etching mask |
| 摘要 |
Process for producing an etching mask on a microstructure, in particular a semiconductor structure with trench capacitors, and corresponding uses of the etching mask which allow for extremely thin photoresist layers to be employed.
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| 申请公布号 |
US7037777(B2) |
申请公布日期 |
2006.05.02 |
| 申请号 |
US20040801781 |
申请日期 |
2004.03.16 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
MOLL HANS-PETER;STAVREV MOMTCHIL;VOGT MIRKO;WEGE STEPHAN |
| 分类号 |
H01L21/32;H01L21/8242;B81C1/00;H01L21/302;H01L21/308;H01L21/334;H01L21/461;H01L21/4763;H01L21/8234;H01L21/8244 |
主分类号 |
H01L21/32 |
| 代理机构 |
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代理人 |
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