发明名称 |
Integrated circuits with rhodium-rich structures |
摘要 |
A structure and method are disclosed for forming a capacitor for an integrated circuit. The capacitor includes a rhodium-rich structure, a rhodium oxide layer in direct contact with the rhodium-rich structure, a capacitor dielectric in direct contact with the rhodium oxide layer and a top electrode over the capacitor. The rhodium-rich structure can include rhodium alloys and the capacitor dielectric preferably has a high dielectric constant.
|
申请公布号 |
US7038263(B2) |
申请公布日期 |
2006.05.02 |
申请号 |
US20040850664 |
申请日期 |
2004.05.21 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
YANG HAINING;GEALY DAN;SANDHU GURTEJ S.;RHODES HOWARD;VISOKAY MARK |
分类号 |
C23C16/18;H01L27/108;H01L21/02;H01L21/28;H01L21/285;H01L21/8242;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
C23C16/18 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|