Non-volatile storage device and rewrite control method thereof

摘要

A non-volatile storage device ( 1 ), such as a flash memory, that may include a plurality of sectors and additional sectors has been disclosed. Sectors may include a physical sector number. A logical sector number may be assigned to a sector with additional sectors not assigned a logical sector number. When an erase/write command is executed for a logical sector address, an additional sector may be selected to have the new or updated data written into and may be assigned the logical sector number. The additional sector assigned the logical sector number may then have the new or updated data written into while the physical sector number previously assigned the logical address is being erased. In this way, an apparent erase time may be reduced. The newly erased sector may be a new additional sector. Each sector may include a control data section ( 101 ) and a data section ( 102 ). Control data section ( 101 ) may store control data for controlling erasing and rewriting.