发明名称 Self-light emitting device and method of manufacturing the same
摘要 To provide a process of successively forming from an EL layer, a cathode, a barrier layer and a cover layer in the same multi-chamber. By using a same film deposition method to form the EL layer and the cover layer, as shown in FIG. 1 A, the EL layer, the cathode, the barrier layer, and the cover layer can be formed in the same multi-chamber in succession. Thus, as shown in FIG. 1 B, a sealed structure of an EL element can be formed.
申请公布号 US7038836(B2) 申请公布日期 2006.05.02
申请号 US20040919335 申请日期 2004.08.17
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;SHIBATA NORIKO
分类号 G02F1/00;B32B19/00;H01L51/00;H01L51/30;H01L51/52;H05B37/02 主分类号 G02F1/00
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