发明名称 Memory device and method having data path with multiple prefetch I/O configurations
摘要 A memory device is operable in either a high mode or a low speed mode. In either mode 32 bits of data from each of two memory arrays are prefetched into respective sets of 32 flip-flops. In the high-speed mode, the prefetched data bits are transferred in parallel to 4 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 4 data bus terminals. In the low speed mode, two sets of prefetched data bits are transferred in parallel to 8 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 8 data bus terminals.
申请公布号 US7038966(B2) 申请公布日期 2006.05.02
申请号 US20050030844 申请日期 2005.01.07
申请人 MICRON TECHNOLOGY, INC. 发明人 KEETH BRENT;JOHNSON BRIAN;MANNING TROY A.
分类号 G11C7/00;G11C11/409;G11C7/10;G11C11/407;G11C11/4096 主分类号 G11C7/00
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