发明名称 |
Selective etch process for making a semiconductor device having a high-k gate dielectric |
摘要 |
A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, and modifying a first portion of the high-k gate dielectric layer to ensure that it may be removed selectively to a second portion of the high-k gate dielectric layer.
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申请公布号 |
US7037845(B2) |
申请公布日期 |
2006.05.02 |
申请号 |
US20030652546 |
申请日期 |
2003.08.28 |
申请人 |
INTEL CORPORATION |
发明人 |
BRASK JUSTIN K.;SHAH UDAY;DOCZY MARK L.;KAVALIEROS JACK;CHAU ROBERT S.;TURKOT, JR. ROBERT B.;METZ MATTHEW V. |
分类号 |
H01L21/302;H01L21/311 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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