发明名称 Apparatus having a hard bias seedlayer structure for providing improved properties of a hard bias layer
摘要 An apparatus having improved hard bias properties of layers of a magnetoresistance sensor is disclosed. Properties of the hard bias layer are improved using a seedlayer structure that includes at least a layer of silicon and a layer comprising chromium or chromium molybdenum. Further, benefits are achieved when the seedlayer structure includes a layer of tantalum.
申请公布号 US7038892(B2) 申请公布日期 2006.05.02
申请号 US20030674831 申请日期 2003.09.30
申请人 HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS, B.V. 发明人 CHAU PHONG V.;FREITAG JAMES MAC;PINARBASI MUSTAFA MICHAEL;ZENG HUA AI;ZOLLA HOWARD GORDON
分类号 G11B5/39;G11B5/127;G11B5/33 主分类号 G11B5/39
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