发明名称 |
Apparatus having a hard bias seedlayer structure for providing improved properties of a hard bias layer |
摘要 |
An apparatus having improved hard bias properties of layers of a magnetoresistance sensor is disclosed. Properties of the hard bias layer are improved using a seedlayer structure that includes at least a layer of silicon and a layer comprising chromium or chromium molybdenum. Further, benefits are achieved when the seedlayer structure includes a layer of tantalum.
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申请公布号 |
US7038892(B2) |
申请公布日期 |
2006.05.02 |
申请号 |
US20030674831 |
申请日期 |
2003.09.30 |
申请人 |
HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS, B.V. |
发明人 |
CHAU PHONG V.;FREITAG JAMES MAC;PINARBASI MUSTAFA MICHAEL;ZENG HUA AI;ZOLLA HOWARD GORDON |
分类号 |
G11B5/39;G11B5/127;G11B5/33 |
主分类号 |
G11B5/39 |
代理机构 |
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主权项 |
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地址 |
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