| 摘要 |
1,014,735. Semi-conductor devices. TEXAS INSTRUMENTS Inc. Oct. 19, 1962 [Oct. 20, 1961], No. 30175/65. Divided out of 1,014,734. Heading H1K. An encapsulated PN junction semi-conductor device, such as described in Specification 1,014,734, comprises a substrate having a substantially flat surface and a semi-conductor wafer on the flat surface. The wafer has a plurality of PN junctions all of which are in the vicinity of one major wafer face and are spaced from the opposite major wafer face. An enclosure including the substrate surrounds the wafer and electrical connections exterior of the enclosure extend into the interior to connect ohmically to various semi-conductor zones of the wafer. The connections include a plurality of spaced coplanar flat conductors on the substantially flat surface and a respective plurality of spaced coplanar elongate flat conductors. The entire opposite major wafer face ohmically rests on one of the spaced coplanar flat conductors and wires ohmically connect between the semi-conductor zone of the one major wafer face and the other ones of the spaced coplanar flat conductors. |
