发明名称 |
Semiconductor device and method for producing the same |
摘要 |
A semiconductor laser device is provided that includes a first conductivity type semiconductor substrate, a first conductivity type cladding layer provided on the semiconductor substrate and an active layer provided on the cladding layer. The active layer has a super-lattice structure including a disordered region in a vicinity of a cavity end face. A first cladding layer of a second conductivity type is provided on the active layer, an etching stop layer of the second conductivity type is provided on the first cladding layer and a second cladding layer of the second conductivity type is provided on the etching stop layer. The second cladding layer forms a ridge structure that extends along a cavity length direction. An impurity concentration in the etching stop layer in the vicinity of the cavity end face is equal to or smaller than about 2x10<SUP>18 </SUP>cm<SUP>-3</SUP>.
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申请公布号 |
US7037743(B2) |
申请公布日期 |
2006.05.02 |
申请号 |
US20030699986 |
申请日期 |
2003.11.03 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ONISHI TOSHIKAZU;ADACHI HIDETO;MANNOU MASAYA;TAKAMORI AKIRA |
分类号 |
H01L21/00;H01S5/00;H01S5/16;H01S5/22;H01S5/223;H01S5/227;H01S5/30;H01S5/34;H01S5/343 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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