| 摘要 |
1,236,160. Semi-conductor devices. NIPPON ELECTRIC CO. Ltd. 22 Dec., 1969 [27 Dec., 1968 (2); 1 April, 1969], No. 62336/69. Heading H1K. Some of the conductive strips interconnecting the elements of a semi-conductor integrated circuit are buried below the epitaxially formed layer containing the elements. Such an integrated circuit comprises a number of elements Q 1 Q 2 , Q 3 Q 4 formed in monocrystalline islands 107, 108, 109, 110 in an epitaxially formed layer on a monocrystalline substrate 101, and isolated from one another by isolating walls 106 of polycrystalline material, interconnection of the elements being achieved by buried conductive strips 102, 103 and surface conductive strips 136, 137, 138, 139 and 140 over insulating surface layer 135. The buried conductive strips are formed on the substrate surface before the deposition of the epitaxially deposited layer. The polycrystalline isolation regions are then grown on bases 105 of 5i0 2 and the monocrystalline regions directly on the substrate. The buried conductive strips are of highly doped semi-conductor material or platinum silicide, or tungsten, chromium, molybdenum or their silicides, or tantalum, titanium or their nitrides, or zirconium. They are insulated as required. The semiconductor material is silicon or germanium, and the breakdown voltage of the isolating walls is improved by diffusion therein of gold or iron in the case of silicon, or copper or nickel in the case of germanium. In another embodiment the buried conductive strips may bridge one another. |
