发明名称 |
Local SONOS-type nonvolatile memory device and method of manufacturing the same |
摘要 |
Provided are a local SONOS-type memory device and a method of manufacturing the same. The device includes a gate oxide layer formed on a silicon substrate; a conductive spacer and a dummy spacer, which are formed on the gate oxide layer and separated apart from each other, the conductive spacer and the dummy spacer having round surfaces that face outward; a pair of insulating spacers formed on a sidewall of the conductive spacer and a sidewall of the dummy spacer which face each other; an ONO layer formed in a self-aligned manner between the pair of insulating spacers; a conductive layer formed on the ONO layer in a self-aligned manner between the pair of insulating spacers; and source and drain regions formed in the silicon substrate outside the conductive spacer and the dummy spacer.
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申请公布号 |
US7037781(B2) |
申请公布日期 |
2006.05.02 |
申请号 |
US20040888660 |
申请日期 |
2004.07.09 |
申请人 |
SAMSUNG ELECTRONICS, CO., LTD. |
发明人 |
CHOI YONG-SUK;YOON SEUNG-BEOM;KIM SEONG-GYUN |
分类号 |
H01L21/336;H01L21/8247;H01L21/28;H01L21/8246;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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