| 摘要 |
For lithographically manufacturing a device with a very high density, a design mask pattern ( 120 ) is distributed on a number of sub-patterns ( 120 a, 120 b, 120 c) by means of a new method. The sub-patterns do not comprise "forbidden" structures ( 135 ) and can be transferred by conventional apparatus to a substrate layer to be patterned. For the transfer, a new stack of layers is used, which comprise a pair of a processing layer ( 22; 26 ) and an inorganic anti-reflection layer ( 24; 28 ) for each sub-pattern. After a first processing layer ( 26 ) has been patterned with a first sub-pattern, it is coated with a new resist layer ( 30 ) which is exposed with a second sub-pattern, and a second processing layer ( 22 ) under the first processing layer is processed with the second sub-pattern.
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