发明名称 |
Semiconductor device having a capping layer including cobalt and method of fabricating the same |
摘要 |
A semiconductor device, and a method of fabricating the same, includes cobalt as a capping layer. An interconnection structure of the semiconductor device has an improved via resistance. In the semiconductor device, a single cobalt layer or a composite film including a cobalt layer and a titanium nitride layer is used as the capping layer of a metal layer.
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申请公布号 |
US7037828(B2) |
申请公布日期 |
2006.05.02 |
申请号 |
US20040916303 |
申请日期 |
2004.08.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JUNG-WOOK;LEE HYEON-DEOK;PARK IN-SUN;PARK JI-SOON |
分类号 |
H01L21/28;H01L21/44;H01L21/768;H01L23/485 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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