发明名称 |
Semiconductor laser device |
摘要 |
A semiconductor laser device includes a dielectric multilayer film with a reflectance of 40% or more, on at least one of optical exit faces of a laser chip. The dielectric multilayer film includes a film of tantalum oxide (Ta<SUB>2</SUB>O<SUB>5</SUB>) and another film of a dielectric oxide, such as aluminum oxide (Al<SUB>2</SUB>O<SUB>3</SUB>), and silicon oxide (SiO<SUB>2</SUB>). The tantalum oxide film has an optical absorption coefficient smaller than that of silicon (Si) and thermal stability in emission superior to that of titanium oxide (TiO<SUB>2</SUB>), thereby remarkably improving the catastrophic optical damage degradation level of the laser chip.
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申请公布号 |
US7039085(B2) |
申请公布日期 |
2006.05.02 |
申请号 |
US20040828267 |
申请日期 |
2004.04.21 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KUNITSUGU YASUHIRO;MATSUOKA HIROMASU;NAKAGAWA YASUYUKI;NISHIGUCHI HARUMI |
分类号 |
H01S5/00;H01S5/028;H01L27/14;H01L31/00;H01S3/08;H01S3/13;H01S5/10 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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