SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SUBSTRATE AND MANUFACTURING METHOD FOR SILICON CARBIDE SINGLE CRYSTAL

摘要

SiC single crystal that includes a first dopant functioning as an acceptor, and a second dopant functioning as a donor is provided, where the content of the first dopant is no less than 5 .times. 10 15 atoms/cm3, the content of the second dopant is no less than 5 .times. 15 atoms/cm3, and the content of the first dopant is greater than the conten t of the second dopant. A manufacturing method for silicon carbide single crystal is provided with the steps of fabricating a raw material by mixing a metal boride with a material that includes carbon and silicon; vaporizing the raw material; generating a mixed gas that includes carbon, silicon, boron and nitride; and growing silicon carbide single crystal that includes boron and nitrogen on a surface of a seed crystal substrate by re- crystallizing the mixed gas on the surface of the seed crystal substrate.