LITHOGRAPHY MASK STRUCTURE

摘要

The invention relates to a reflecting lithography mask comprising a reflecting coating (RR) and a stack which are arranged on a substrate (S), wherein said stack consists of an engraving preventing layer and an absorption layer and covers a part of the reflecting coating, only. Said absorption layer is made of a dielectric material only and forms a layer on the mask surface. Appropriately, said dielectric material is embodied in the form of HfO