发明名称 MEMORY DEVICE CONFIGURED TO DETECT FAILURE OF TEMPERATURE SENSOR THEREOF AND METHOD OF OPERATING AND TESTING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a temperature compensation type self-refresh semiconductor memory device detecting failure of a temperature sensor and to provide operating and testing methods of a memory device using the same. <P>SOLUTION: The memory device includes a temperature sensor configured to generate a temperature detection signal responsively to a temperature of the memory device and a self-refresh control circuit configured to control a refresh of the memory device responsively to the temperature detection signal. The device further includes a temperature-detection-error sensing circuit configured to activate a temperature-detection-error signal responsively to an error in the temperature detection signal. Thereby, the semiconductor memory device having a problem in current characteristics due to failure of the temperature sensor can be detected at an early stage. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006114205(A) 申请公布日期 2006.04.27
申请号 JP20050282845 申请日期 2005.09.28
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 SHIM JAE-EUNG;CHOI JUNG-YONG;KANG YOUNG-GU;HWANG MIN-GYU
分类号 G11C29/08;G01R31/28;G11C11/401;G11C11/406 主分类号 G11C29/08
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