发明名称 |
MEMORY DEVICE CONFIGURED TO DETECT FAILURE OF TEMPERATURE SENSOR THEREOF AND METHOD OF OPERATING AND TESTING THE SAME |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a temperature compensation type self-refresh semiconductor memory device detecting failure of a temperature sensor and to provide operating and testing methods of a memory device using the same. <P>SOLUTION: The memory device includes a temperature sensor configured to generate a temperature detection signal responsively to a temperature of the memory device and a self-refresh control circuit configured to control a refresh of the memory device responsively to the temperature detection signal. The device further includes a temperature-detection-error sensing circuit configured to activate a temperature-detection-error signal responsively to an error in the temperature detection signal. Thereby, the semiconductor memory device having a problem in current characteristics due to failure of the temperature sensor can be detected at an early stage. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
申请公布号 |
JP2006114205(A) |
申请公布日期 |
2006.04.27 |
申请号 |
JP20050282845 |
申请日期 |
2005.09.28 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
SHIM JAE-EUNG;CHOI JUNG-YONG;KANG YOUNG-GU;HWANG MIN-GYU |
分类号 |
G11C29/08;G01R31/28;G11C11/401;G11C11/406 |
主分类号 |
G11C29/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|