| 发明名称 |
Method of fabricating NAND-type flash EEPROM without field oxide isolation |
| 摘要 |
Methods are described for fabricating NAND-type EEPROMs without field oxide isolation. P+ implantations are employed to isolate adjacent memory cells.
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| 申请公布号 |
US2006086968(A1) |
申请公布日期 |
2006.04.27 |
| 申请号 |
US20040971465 |
申请日期 |
2004.10.22 |
| 申请人 |
CHEN MING-SHANG;LU WEN-PIN |
发明人 |
CHEN MING-SHANG;LU WEN-PIN |
| 分类号 |
H01L29/788;H01L21/336 |
主分类号 |
H01L29/788 |
| 代理机构 |
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