| 摘要 |
A method of controlling electromigration, and the adverse effects thereof, in a patterned, electrically conductive layer (9) of a semiconductor device. A plurality of vacancy dams (10) are created at respective locations along the length of a metal interconnect (9) by implantation of selected atoms. Each vacancy dam (10) causes vacancies created by electromigration (8) to accumulate thereat, thereby distributing the total effect of such electromigration along the length of the line (9) and significantly increasing the life span of the semiconductor device. |
