| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method for suppressing short channel effects, and for reducing a resistance to be generated on an interface between a surface strap formed on the surface of a semiconductor substrate and a conductive layer formed in a hole. <P>SOLUTION: The surface of a semiconductor substrate 100 is provided with a capacitor insulating film 150 covering the internal surface in the neighborhood of the bottom of a hole 140; a capacitor electrode 160 filling the inside of the hole 140; an insulating film 180 covering the internal surface of the hole 140; conductive layers 190 and 210 including predetermined impurity formed, so that the inside covered by the insulating film 180 can be filled on the capacitor electrode 160; a surface connection layer 340 for electrically connecting the conductive layer 210 to a source area 290 or a drain region 300; and an impurity diffusion prevention film 200 formed so that the internal surface of the hole 140 can be covered, and formed to predetermined depth from an interface between the surface connection layer 340 and the conductive layer 210, so that its film thickness can be made thinner than that of the insulating film 180. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
