| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of transmitting the image of a mask pattern of various pitch ranges to a substrate and, more particularly, to improve to transfer a good pattern forming image to the whole pitch covering a dense, a semi-dense and a sparse range. <P>SOLUTION: A method of manufacturing a device includes the steps of irradiating the mask pattern of an attenuation phase shift mask, using an irradiation profile for constituting a multi-electrode irradiation for elements on an axis and elements on a non-axis; and projecting the image of the irradiated mask pattern to the substrate. The mask pattern forms an auxiliary fixture which is not printed to the pitch exceeding double as large as the minimum pitch. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
