发明名称 THIN-FILM TRANSISTOR DISPLAY PANEL UTILIZING ORGANIC SEMICONDUCTOR, AND MANUFACTURING METHOD THEREFOR
摘要 <P>PROBLEM TO BE SOLVED: To provide an organic semiconductor thin-film transistor display panel which can stably ensure thin-film transistor characteristics, and to provide a manufacturing method therefor. <P>SOLUTION: A method of manufacturing an organic semiconductor thin-film transistor display panel comprises a process of forming the island of a light-blocking film on an insulating substrate, and forming an interlayer insulation film on the insulating substrate; a process of forming a drain electrode and a data line including a source electrode, and forming a partition, having an opening exposing portions of the source and drain electrodes and a region in between the source and drain electrodes and a contact hole exposing the drain electrode; a process of forming an organic semiconductor in the opening by means of an inkjet system, forming a gate insulating film on the organic semiconductor, and forming a gate line having a gate electrode at the partition; and a process of forming a passivation layer which covers the gate line and exposes the drain electrode, and forming a pixel electrode on the passivation layer. This method can stably ensure thin-film transistor characteristics. The manufacturing process can be simplified, since the partition and the interlayer insulation film or the passivation layer are formed only by a photolithograhic process that uses an organic insulating material. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006114862(A) 申请公布日期 2006.04.27
申请号 JP20050032965 申请日期 2005.02.09
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 LEE YONG-UK;KO MUNSHAKU;RYU MIN-SEONG;KIM BO-SUNG
分类号 H01L29/786;G02F1/1335;G02F1/1368;H01L51/05 主分类号 H01L29/786
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