发明名称 SEMICONDUCTOR DEVICE, CIRCUIT, DISPLAY DEVICE USING THEM, AND DRIVING METHOD OF THEM
摘要 PROBLEM TO BE SOLVED: To reduce defective operation due to a history effect in a circuit that uses a MOS type transistor having a floating body, provide a device with good electrical properties, and improve sensitivities of a sense amplifier circuit, a latch circuit that contain the MOS type transistor as components. SOLUTION: As shown in Figure 1, electrical properties of the MOS type transistor 4901a, 4901b are utilized during first duration (effective duration) 5001 to output a signal required for circuits other than a first circuit. During second duration (pausing duration) 5002 excluding the first duration 5001, step waveform voltages 5003a, 5003b greater than or equal to a threshold of the MOS type transistor are supplied between gate sources for the MOS type transistors 4901a, 4901b. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006115484(A) 申请公布日期 2006.04.27
申请号 JP20050268896 申请日期 2005.09.15
申请人 NEC CORP;NEC LCD TECHNOLOGIES LTD 发明人 HAGA HIROSHI;OTOSE TOMOHIKO;ASADA HIDEKI;NONAKA YOSHIHIRO;KORENARI TAKAHIRO;TAKATORI KENICHI
分类号 H03K3/356;G09G3/20;G09G3/36;G11C11/409;H01L21/822;H01L27/04;H01L27/08;H01L29/786 主分类号 H03K3/356
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