发明名称 Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same
摘要 A memory device including a single transistor having functions of RAM and ROM and methods for operating and manufacturing the same are provided. The memory device includes a single transistor formed on a substrate. The transistor may be a memory transistor having a gate with a nonvolatile memory element, or the nonvolatile memory element is provided between the transistor and the substrate.
申请公布号 US2006086966(A1) 申请公布日期 2006.04.27
申请号 US20050296510 申请日期 2005.12.08
申请人 发明人 YOO IN-KYEONG;KIM BYONG-MAN
分类号 H01L29/76 主分类号 H01L29/76
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