METHOD FOR FORMING GATE ELECTRODE OF A SEMICONDUCTOR DEVICE,申请号KR19990037101-传众专利搜索

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发明名称	METHOD FOR FORMING GATE ELECTRODE OF A SEMICONDUCTOR DEVICE
摘要
申请公布号	KR100574481(B1)	申请公布日期	2006.04.27
申请号	KR19990037101	申请日期	1999.09.02
申请人		发明人
分类号	H01L21/288	主分类号	H01L21/288
代理机构		代理人
主权项
地址

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