Method for forming silicon-germanium in the upper portion of a silicon substrate

摘要

A method for forming silicon-germanium in the upper portion of a silicon substrate, including the steps of: depositing a germanium layer doped at a concentration in dopant elements greater than 10¹⁹ atoms per cm³ on a silicon substrate; heating to have the germanium diffuse into the silicon substrate to form a doped silicon-germanium layer in the upper portion of the silicon substrate; and eliminating the germanium layer.