| 摘要 |
The present invention is directed to a new semiconductor film comprising of metal oxide grown on a substrate and its fabrication method. The metal oxide is comprised of molybdenum oxide which is very useful to fabricate electronic devices with high withstand voltages and photonic and electronic hostile-environment devices. An important aspect of the present invention is that the molybdenum oxide film is formed on a substrate made of material which has been used in usual electronic and photonic devices. The most popular material is silicon. Another important aspect of the present invention is a new method to form a molybdenum oxide film on a substrate.
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