发明名称 Bumping process and structure thereof
摘要 A bumping process is provided as following: at first, providing a wafer, then forming a first photo-resist layer on a active surface of the wafer and forming at least a first opening on the first photo-resist layer; and forming a first copper pillar in the first opening; then forming a second photo-resist layer on the first photo-resist layer and forming at least a second opening on the second photo-resist layer, wherein the second opening is bigger than the first opening so that the first copper pillar and the surrounding first photo-resist layer are exposed in the second opening; and forming a second copper pillar in the second opening; finally forming a solder layer onto the second pillar, and removing the first and second photo-resist layers.
申请公布号 US2006088992(A1) 申请公布日期 2006.04.27
申请号 US20050229547 申请日期 2005.09.20
申请人 ADVANCED SEMICONDUCTOR ENGINEERING, INC. 发明人 HUANG MIN-LUNG;CHEN YI-HSIN;CHEN JIA-BIN
分类号 H01L21/44;H01L21/60;H01L23/485 主分类号 H01L21/44
代理机构 代理人
主权项
地址