发明名称 |
Bumping process and structure thereof |
摘要 |
A bumping process is provided as following: at first, providing a wafer, then forming a first photo-resist layer on a active surface of the wafer and forming at least a first opening on the first photo-resist layer; and forming a first copper pillar in the first opening; then forming a second photo-resist layer on the first photo-resist layer and forming at least a second opening on the second photo-resist layer, wherein the second opening is bigger than the first opening so that the first copper pillar and the surrounding first photo-resist layer are exposed in the second opening; and forming a second copper pillar in the second opening; finally forming a solder layer onto the second pillar, and removing the first and second photo-resist layers. |
申请公布号 |
US2006088992(A1) |
申请公布日期 |
2006.04.27 |
申请号 |
US20050229547 |
申请日期 |
2005.09.20 |
申请人 |
ADVANCED SEMICONDUCTOR ENGINEERING, INC. |
发明人 |
HUANG MIN-LUNG;CHEN YI-HSIN;CHEN JIA-BIN |
分类号 |
H01L21/44;H01L21/60;H01L23/485 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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