| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implantation apparatus, equipped with a low-cost ion beam distribution measurement device and that is improved in the throughput of ion implantation. SOLUTION: This ion implantation device is so structured that desired ion species are extracted from an ion source generating ions and accelerated or decelerated to the desired energy; and the ions are implanted into an implantation surface of a substrate by running the ions thereon by a scanner. The ion implantation device is composed by providing the ion beam distribution measurement device 10 comprising: a Faraday cup 20 disposed on the downstream side of the substrate for measuring the current value of the ion beam; and a shielding plate 30 disposed between the substrate and the Faraday cup 20, movable in the same direction as the running direction of the ion beam B and having a single slit 32. COPYRIGHT: (C)2006,JPO&NCIPI
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