发明名称 |
VOLTAGE BOOSTER TRANSISTOR |
摘要 |
A voltage booster transistor with an optimal conducting path formed in widebandgap semiconductors like Silicon Carbide and Diamond, is provided as a power transistor with a voltage rating >200V. Contrary to conventional vertical design of power transistors, a higher, optimum doping for a given thickness supports higher Source/Drain blocking voltage. A topside and backside gate region of the opposite conductivity type than the channel region providing control of source to drain current path through a small gate voltage. The backside gate and the Drain junction are able to support the rated blocking voltage of the device. |
申请公布号 |
WO2005122256(A3) |
申请公布日期 |
2006.04.27 |
申请号 |
WO2005US19465 |
申请日期 |
2005.06.03 |
申请人 |
GENESIC SEMICONDUCTOR INC.;SINGH, RANBIR |
发明人 |
SINGH, RANBIR |
分类号 |
H01L23/58;H01L29/10;H01L29/16;H01L29/24;H01L29/739;H01L29/808 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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