发明名称 |
CRYSTALLOGRAPHIC ALIGNMENT OF HIGH-DENSITY NANOWIRE ARRAYS |
摘要 |
A method for controlling the crystallographic growth direction and geometric and physical characteristics of nanowires using a metal-organic chemical vapor deposition and substrate selection. As an illustration of the method, epitaxial growth of wurtzite gallium nitride on (100) y -LiAIO<SUB>2</SUB> and (111) MgO single crystal substrates resulted in the selective growth of nanowires in the orthogonal [110] and [001] directions, respectively. Triangular and hexagonal cross sections were observed as a result of substrate-induced constraints of lattice parameter matching and symmetry registry. These nanowire arrays exhibit a systematic difference in their temperature dependent band-edge emission resulting from the different size, shape, and anisotropic polarity of the nanostructures. Scaling of the synthetic process is entirely compatible with existing GaN thin-film technology and should enable the realization of a new generation of GaN nanowire devices and systems. |
申请公布号 |
WO2005110057(A3) |
申请公布日期 |
2006.04.27 |
申请号 |
WO2005US00568 |
申请日期 |
2005.01.06 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;YANG, PEIDONG;KUYKENDAL, TEVYE;PAUZAUSKIE, PETER |
发明人 |
YANG, PEIDONG;KUYKENDAL, TEVYE;PAUZAUSKIE, PETER |
分类号 |
H01L21/36;H01L21/20 |
主分类号 |
H01L21/36 |
代理机构 |
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代理人 |
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