Method for formation of source contact of flash memory element involves formation of first intermediate isolation layer on semiconductor substrate and structuring of first isolation layer and formation of layer on entire surface

摘要

The method involves formation of first intermediate isolation layer (14) on semiconductor substrate (10), in which connecting region (24b) and gate electrode structure for source selection line (SSL) of cell region (A) are present. First intermediate isolation layer is structured by which connecting region is exposed more to SSL on the side of gate electrode. Formation of layer on entire surface takes place. The source contact is formed by applying polishing process to intermediate isolation layer.