Power semiconductor module with pressure contact device

摘要

The power semiconductor module has a butt contact mechanism having a substrate, a frame-like housing (60) and a housing (90) for pressure introduction. The substrate (20) is made from an insulated body (24) with and structured so that isolated conductive strips are provided and the module is provided inside a metallic layer (26). On the conductive strips the power semiconductor element (30) are arranged and connected in a circuit. The circuit connections are arranged in volume and pressure transferring element stamps are provided. The housing introduces pressure onto the stamps. The stamp and pressure transferring part of the stamp is arranged on several layers. The pressure transferring part of the stamp (98) is fixed by a splicing tape on the power semiconductor elements (30). The stamps are fixed by a subframe (62), arranged inside the housing (60).