发明名称 QUANTUM WELL STRUCTURE
摘要 A quantum well structure according to the invention includes a quantum well layer (107) arranged between two barrier layers (109, 112). It is distinguished in that at least one of the barrier layers (109) includes nanostructures (110) which compensate or modulate a lateral homogeneity of the barrier layer (109), that exists without the nanostructures (110), that is to say a homogeneity in the directions extending perpendicularly to the stacking direction of the layers in the quantum well structure.
申请公布号 EP1649521(A1) 申请公布日期 2006.04.26
申请号 EP20040739806 申请日期 2004.06.11
申请人 HUMBOLDT-UNIVERSITAET ZU BERLIN 发明人 MASSELINK, WILLIAM, TED;SEMTSIV, MYKHAYLO, PETROVYCH
分类号 H01L29/12;H01L29/205;H01L31/0352;(IPC1-7):H01L31/035;H01S5/34 主分类号 H01L29/12
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