发明名称 |
A method to form both high and low-k materials over the same dielectric region, and their application in mixed mode circuits |
摘要 |
A new method of provided for forming in one plane layers of insulating material having both high and low dielectric constants. Layers, having selected and preferably non-identical parameters of dielectric constants, are successively deposited interspersed with layers of etch stop material. The layers can be etched, creating openings there-through that can be filled with a layer of choice. |
申请公布号 |
SG120934(A1) |
申请公布日期 |
2006.04.26 |
申请号 |
SG20030003587 |
申请日期 |
2003.06.25 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
PRADEEP YELAHANKA RAMACHANDRAMURTHY;CHU SANFORD;NG CHIT HWEI;ZHENG JIA ZHEN;VERMA PURAKH |
分类号 |
H01L23/522;H01L21/02;H01L21/312;H01L21/314;H01L21/316;H01L21/768;H01L21/822;H01L27/04;H01L27/06;H01L27/12;(IPC1-7):H01L21/768 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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