MEMOIRE MAGNETIQUE A JONCTION TUNNEL MAGNETIQUE ET PROCEDE POUR SON ECRITURE

摘要

The RAM has memory points (40) each comprising a magnetic tunnel junction. Each junction has a reference, or "trapped", layer (44) in which magnetization direction is fixed, separated by an isolating layer (43) from a "free" magnetic layer (42) in which magnetization direction is variable. The storage layer is formed from at least one soft magnetic layer with reduced magnetic anisotropy and a trapped layer, the two layers being magnetically coupled by contact. The operation temperature of the memory while reading or at rest is chosen to be below that of the free and trapped layers. An independent claim is included for a method of writing in a magnetic memory.