| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser apparatus which can reduce the resistance of the device element, without causing laser characteristics to degrade. SOLUTION: An active layer is provided between a p-type AlGaInP cladding layer and an n-type AlGaInP clad layer, and a p-type GaInP band-discontinuity relaxing layer is provided on the p-type AlGaInP clad layer. A plurality of AlGaInP potential-barrier suppressing layers are formed between a ridge part of the p-type AlGaInP and the GaInP band-discontinuity relaxing layer which constitute a ridge waveguide, wherein the thickness of the AlGaInP potential-barrier layers is made thinner than that of the p-type GaInP band-discontinuity relaxing layer; the total thickness of the p-type GaInP band-discontinuity relaxing layer and the plurality of the AlGaInP potential-barrier suppressing layers is set to≤0.1μm, and the Al content in the p-type AlGaInP clad layer and that in each of the AlGaInP potential-barrier suppression layers are made the smaller the closer the position of a layer is to the p-type GaInP band-discontinuity relaxing layer. COPYRIGHT: (C)2006,JPO&NCIPI
|
