| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device attaining a silicide contact, where increase in the junction leakage current and deterioration of the junction breakdown voltage are suppressed. SOLUTION: A dopant ion implanting process which is performed for forming source and drain regions (S and D) is divided into two processes. In the first stage, dopant ions implantation is carried out once for forming p-n junctions between the source/drain region (S and D) and a well region (3). In the second process, a large amount of dopant ions are implanted once to a shallow depth, at which the ions do not affect the p-n junctions between the source/drain region (S and D) and the well region. When the surfaces of the source/drain regions (S and D) are silicided (12), after performing activation heat treatment of dopant, the resistances in the source/drain regions (S and D), and the leakage from the pn junctions can be reduced. COPYRIGHT: (C)2006,JPO&NCIPI
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