| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a flash memory element which can acquire a charge capacity of a floating gate electrode. SOLUTION: This method for forming a dielectric film of a flash memory comprises a step for forming the floating gate electrode of a doped polysilicon film on a semiconductor substrate, and forming a polysilicon layer of a HSG (Hemi Spherical Grain) shape on the doped polysilicon film; a step for performing a nitriding process after forming the polysilicon layer of the HSG shape; a step for forming an Al<SB>2</SB>O<SB>3</SB>film on a nitrided resulting material; and a step for forming a control gate electrode on the formed Al<SB>2</SB>O<SB>3</SB>film. COPYRIGHT: (C)2006,JPO&NCIPI
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