发明名称 MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce erroneous writing and improve thermal stability. SOLUTION: This magnetoresistive effect element 10 comprises a fixing layer 11 fixed in its direction of magnetization, a recording layer 13 variable in its direction of magnetization, and a non-magnetic layer 12 provided between the fixing layer 11 and the recording layer 13. The thickness T of the recording layer 13 is 5 nm to 20 nm, and the recording layer 13 includes an extending part 10a extended in a first direction, and a projected part 10b projected in a second direction perpendicular to the first direction from the side surface of the extending part 10a. When a maximum length in the first direction of the recording layer 13 is specified as a first length L and a maximum length in the second direction of the recording layer 13 is specified as a second length W, a ratio of the first length L and the second length W is 1.5 to 2.2. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006108565(A) 申请公布日期 2006.04.20
申请号 JP20040296456 申请日期 2004.10.08
申请人 TOSHIBA CORP 发明人 NAKAYAMA MASAHIKO;KAI TADASHI;KISHI TATSUYA;FUKUZUMI YOSHIAKI;NAGASE TOSHIHIKO
分类号 H01L43/08;G11C11/15;H01L21/8246;H01L27/105 主分类号 H01L43/08
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