SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a technology capable of suppressing the deterioration of the electron mobility in a channel region formed in a distorted silicon layer. SOLUTION: A p-type distorted silicon layer 22 is formed on a p-type silicon-germanium layer 24 formed on a semiconductor substrate. Herein, the thickness of the p-type distorted silicon layer 22 is made to be larger than the critical thickness at which misfit dislocation does not occur. Therefore, the misfit dislocation occurs in the vicinity of the interface between the p-type distorted silicon layer 22 and the p-type silicon-germanium layer 24. Further, the impurity concentration of an n-type distorted silicon layer 28a and an n-type silicon-germanium layer is≤1×1019cm-3in the location under the end of a gate electrode 26 wherein misfit dislocation occurs. COPYRIGHT: (C)2006,JPO&NCIPI