发明名称 |
High temperature light-emitting diodes |
摘要 |
A heterostructure semiconductor device capable of emitting electromagnetic radiation and having a junction with opposite conductivity type materials on either side thereof supported on a substrate with an active layer therebetween comprising zinc oxide and having a band gap energy that is less than that of either of the opposite conductivity type materials.
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申请公布号 |
US2006081873(A1) |
申请公布日期 |
2006.04.20 |
申请号 |
US20050243469 |
申请日期 |
2005.10.04 |
申请人 |
SVT ASSOCIATES, INC. |
发明人 |
OSINSKY ANDREI V.;DONG JIANWEI;KAUSER MOHAMMED Z.;HERTOG BRIAN J.;DABIRAN AMIR M. |
分类号 |
H01L29/732 |
主分类号 |
H01L29/732 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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